Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Comparison of switching characteristics of HfOx RRAM device with different switching layer thicknesses
- Authors
- Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Choi, Yeon-Joon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook
- Issue Date
- 2019
- Publisher
- IEEE
- Citation
- 2019 SILICON NANOELECTRONICS WORKSHOP (SNW), pp 69 - 70
- Pages
- 2
- Journal Title
- 2019 SILICON NANOELECTRONICS WORKSHOP (SNW)
- Start Page
- 69
- End Page
- 70
- ISSN
- 2161-4636
- Abstract
- This paper presents switching characteristics of Ni/HfOx/p(+)-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfOx RRAM while step-like reset process is seen from 5 nm HfOx RRAM. From the measurement results, fabricated RRAM device with thicker switching layer is more suitable for nonvolatile memory operation while thinner HfOx layer has potential for application in neuromorphic computing system.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.