Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application
- Authors
- Bang, Suhyun; Kim, Min-Hwi; Kim, Tae-Hyeon; Lee, Dong Keun; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook
- Issue Date
- Dec-2018
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Gradual switching; Self-rectification; Resistive-switching random-access memory; Amorphous indium gallium zinc oxide; Synaptic device
- Citation
- SOLID-STATE ELECTRONICS, v.150, pp 60 - 65
- Pages
- 6
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 150
- Start Page
- 60
- End Page
- 65
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72131
- DOI
- 10.1016/j.sse.2018.10.003
- ISSN
- 0038-1101
1879-2405
- Abstract
- In this work, we investigated the gradual switching and self-rectifying characteristics of Cu/alpha-IGZO/p(+)-Si resistive-switching random-access memory (RRAM) device. We fabricated the RRAM cells with Cu as the top electrode (TE) and heavily doped p-type silicon as the bottom electrode (BE), and amorphous indium gallium zinc oxide (alpha-IGZO) film as the switching layer. In particular, we developed a bilayer IGZO film consisting of an oxygen-deficient layer and an oxygen-rich one by controlling the oxygen concentrations in the respective switching layers in the expectation of gradual switching owing to an oxygen vacancy reservoir. Fabricated RRAM cells successfully showed the typical hysteretic I-V curves including SET and RESET operations in the DC sweep mode. Furthermore, gradual switching and self-rectifying performances were observed. These characteristics are suitable to applications for synaptic devices toward the advanced neuromorphic systems.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72131)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.