Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory
DC Field | Value | Language |
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dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Lin, Chih-Yang | - |
dc.contributor.author | Kim, Tae-Hyeon | - |
dc.contributor.author | Kim, Min-Hwi | - |
dc.contributor.author | Kim, Hyungjin | - |
dc.contributor.author | Chen, Ying-Chen | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Chang, Yao-Feng | - |
dc.date.accessioned | 2024-02-19T02:30:59Z | - |
dc.date.available | 2024-02-19T02:30:59Z | - |
dc.date.issued | 2018-08 | - |
dc.identifier.issn | 1931-7573 | - |
dc.identifier.issn | 1556-276X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72132 | - |
dc.description.abstract | This letter presents dual functions including selector and memory switching in a V/SiOx/AlOy/p(++ )Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 mu A. The shifts to the V-electrode side of the oxygen form the VOx layer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30 mu A) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiOy layer. 1.5-nm-thick AlOy layer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463 eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | SPRINGEROPEN | - |
dc.title | Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory | - |
dc.type | Article | - |
dc.identifier.doi | 10.1186/s11671-018-2660-9 | - |
dc.identifier.bibliographicCitation | NANOSCALE RESEARCH LETTERS, v.13 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.wosid | 000443040400001 | - |
dc.identifier.scopusid | 2-s2.0-85052201926 | - |
dc.citation.title | NANOSCALE RESEARCH LETTERS | - |
dc.citation.volume | 13 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.subject.keywordAuthor | Selector | - |
dc.subject.keywordAuthor | Memory | - |
dc.subject.keywordAuthor | Nonlinearity | - |
dc.subject.keywordAuthor | Silicon oxide | - |
dc.subject.keywordAuthor | Vanadium | - |
dc.subject.keywordPlus | RESISTIVE SWITCHING BEHAVIOR | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | RRAM | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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