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Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Tae-Hyeon | - |
| dc.contributor.author | Kim, Sungjun | - |
| dc.contributor.author | Kim, Hyungjin | - |
| dc.contributor.author | Kim, Min-Hwi | - |
| dc.contributor.author | Bang, Suhyun | - |
| dc.contributor.author | Cho, Seongjae | - |
| dc.contributor.author | Park, Byung-Gook | - |
| dc.date.accessioned | 2024-02-19T02:31:03Z | - |
| dc.date.available | 2024-02-19T02:31:03Z | - |
| dc.date.issued | 2018-02 | - |
| dc.identifier.issn | 0038-1101 | - |
| dc.identifier.issn | 1879-2405 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72136 | - |
| dc.description.abstract | In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p(+)-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
| dc.title | Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1016/j.sse.2017.10.015 | - |
| dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.140, pp 51 - 54 | - |
| dc.description.isOpenAccess | N | - |
| dc.identifier.wosid | 000425490800011 | - |
| dc.identifier.scopusid | 2-s2.0-85041241439 | - |
| dc.citation.endPage | 54 | - |
| dc.citation.startPage | 51 | - |
| dc.citation.title | SOLID-STATE ELECTRONICS | - |
| dc.citation.volume | 140 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.publisher.location | 영국 | - |
| dc.subject.keywordAuthor | WOx RRAM | - |
| dc.subject.keywordAuthor | Bipolar resistive switching | - |
| dc.subject.keywordAuthor | Rapid thermal oxidation (RTO) | - |
| dc.subject.keywordAuthor | MIS structure | - |
| dc.subject.keywordAuthor | Space-charge-limited current (SCLC) | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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