Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device
- Authors
- Kim, Tae-Hyeon; Kim, Sungjun; Kim, Hyungjin; Kim, Min-Hwi; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook
- Issue Date
- Feb-2018
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- WOx RRAM; Bipolar resistive switching; Rapid thermal oxidation (RTO); MIS structure; Space-charge-limited current (SCLC)
- Citation
- SOLID-STATE ELECTRONICS, v.140, pp 51 - 54
- Pages
- 4
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 140
- Start Page
- 51
- End Page
- 54
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72136
- DOI
- 10.1016/j.sse.2017.10.015
- ISSN
- 0038-1101
1879-2405
- Abstract
- In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p(+)-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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