Analog Synaptic Behavior of a Silicon Nitride Memristor
- Authors
- Kim, Sungjun; Kim, Hyunjin; Hwang, Sungmin; Kim, Min-Hwi; Chang, Yao-Feng; Park, Byung-Gook
- Issue Date
- Nov-2017
- Publisher
- AMER CHEMICAL SOC
- Keywords
- memristor; analog resistive switching; silicon nitride; synapse; spike-timing-dependent plasticity
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.9, no.46, pp 40420 - 40427
- Pages
- 8
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 9
- Number
- 46
- Start Page
- 40420
- End Page
- 40427
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72138
- DOI
- 10.1021/acsami.7b11191
- ISSN
- 1944-8244
1944-8252
- Abstract
- In this paper, we present a synapse function using analog resistive-switching behaviors in a SiNx-based memristor with a complementary metal-oxide-semiconductor compatibility and expandability to three-dimensional crossbar array architecture. A progressive conductance change is attainable as a result of the gradual growth and dissolution of the conducting path, and the series resistance of the AlOy layer in the Ni/SiNx/AlOy/TiN memristor device enhances analog switching performance by reducing current overshoot. A continuous and smooth gradual reset switching transition can be observed with a compliance current limit (>100 mu A), and is highly suitable for demonstrating synaptic characteristics. Long-term potentiation and long-term depression are obtained by means of identical pulse responses. Moreover, symmetric and linear synaptic behaviors are significantly improved by optimizing pulse response conditions, which is verified by a neural network simulation. Finally, we display the spike-timing-dependent plasticity with the multipulse scheme. This work provides a possible way to mimic biological synapse function for energy-efficient neuromorphic systems by using a conventional passive SiNx layer as an active dielectric.
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