Surface properties of Al-doped ZnO thin film before and after CF4/Ar plasma etching
- Authors
- Joo, Young-Hee; Kim, Gwan-Ha; Um, Doo-Seung; Kim, Chang-Il
- Issue Date
- Jul-2022
- Publisher
- IOP Publishing Ltd
- Keywords
- Al-doped ZnO; plasma etching; F-based plasma; surface characteristics; X-ray photoelectron spectroscopy; ultraviolet photoelectron spectroscopy
- Citation
- PLASMA SCIENCE & TECHNOLOGY, v.24, no.7
- Journal Title
- PLASMA SCIENCE & TECHNOLOGY
- Volume
- 24
- Number
- 7
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72171
- DOI
- 10.1088/2058-6272/ac5975
- ISSN
- 1009-0630
2058-6272
- Abstract
- Al-doped ZnO (AZO) is considered as an alternative to transparent conductive oxide materials. Patterning and achieving a stable surface are important challenges in the development and optimization of dry etching processes, which must be overcome for the application of AZO in various devices. Therefore, in this study, the etch rate and surface properties of an AZO thin film after plasma etching using the adaptive coupled plasma system were investigated. The fastest etch rate was achieved with a CF4/Ar ratio of 50:50 sccm. Regardless of the ratio of CF4 to Ar, the transmittance of the film in the visible region exceeded 80%. X-ray photoelectron spectroscopy analysis of the AZO thin film confirmed that metal-F bonding persists on the surface after plasma etching. It was also shown that F eliminates O vacancies. Consequently, the work function and bandgap energy increased as the ratio of CF4 increased. This study not only provides information on the effect of plasma on AZO thin film, but identifies the cause of changes in the device characteristics during device fabrication.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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