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Switching and Conduction Mechanism of Cu/Si3N4/Si RRAM with CMOS Compatibility
- Issue Date
- 2014
- Publisher
- IEEE
- Citation
- 2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
- Journal Title
- 2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
- ISSN
- 2161-4636
- Abstract
- In this work, we fabricated CMOS compatible Cu/Si3N4/Si RRAM, showing good resistive switching. This memory cell is stable for bipolar switching (BS) than unipolar switching (US). Trap-controlled space charge limited current (SCLC) conduction is observed. Low resistance state (LRS) shows semiconducting behavior according to the temperature dependency.
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