Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells
- Authors
- Kang, Dong-Won; Kwon, Jang-Yeon; Shim, Jenny; Lee, Heon-Min; Han, Min-Koo
- Issue Date
- Oct-2012
- Publisher
- ELSEVIER
- Keywords
- GaN; TiO2/ZnO; Anti-reflection layer; Microcrystalline silicon; Thin film solar cells
- Citation
- SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.105, pp 317 - 321
- Pages
- 5
- Journal Title
- SOLAR ENERGY MATERIALS AND SOLAR CELLS
- Volume
- 105
- Start Page
- 317
- End Page
- 321
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/74959
- DOI
- 10.1016/j.solmat.2012.06.041
- ISSN
- 0927-0248
1879-3398
- Abstract
- Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an antireflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (mu c-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of pc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO2/ZnO bilayer ARL Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (similar to 10 nm) in case of the TiO2/ZnO bilayer. GaN ARL can replace the TiO2/ZnO bilayer ARL in terms of high performance and simple fabrication process. (c) 2012 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > School of Energy System Engineering > 1. Journal Articles
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