Boron and Aluminum Codoped ZnO Transparent Conducting Films with High Electrical Stability
- Authors
- Kang, Dong-Won; Kwon, Jang-Yeon; Lee, Do-Joong; Han, Min-Koo
- Issue Date
- 2012
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.159, no.2, pp H61 - H65
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 159
- Number
- 2
- Start Page
- H61
- End Page
- H65
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/74970
- DOI
- 10.1149/2.002202jes
- ISSN
- 0013-4651
1945-7111
- Abstract
- We suggest boron (B) and aluminum (Al) codoped ZnO (BAZO) transparent conducting thin films with high electrical stability for photovoltaic applications. The resistivity of widely used Al-doped ZnO (AZO) film decreased slightly by B doping. Above all, the resistivity of BAZO (4.9 at. % boron) increased by less than 1.5 times, whereas that of reference AZO film increased by over than 8 times after thermal annealing in atmospheric air. The carrier concentration and Hall mobility were much less degraded in BAZO films. X-ray photoelectron spectroscopy analysis showed that the peak portion related with chemisorbed oxygen at 100 nm-inside of the film was suppressed in BAZO film compared with AZO film. The B atoms would restrain the oxygen permeation into the film, which made the process of oxygen chemisorption inactive. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.002202jes] All rights reserved.
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Collections - College of Engineering > School of Energy System Engineering > 1. Journal Articles
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