The characteristics of the asymmetric-offset structure n-type polycrystalline thin-film transistors fabricated by alternating magnetic-field-enhanced rapid thermal annealing
- Authors
- Lee, Won-Kyu; Park, Sanq-Geun; Kang, Dong-Won; Jeong, Byoung-Seong; Choi, Joonhoo; Kim, Chi-Woo; Han, Min-Koo
- Issue Date
- 2008
- Citation
- IDW '08 - Proceedings of the 15th International Display Workshops, v.2, pp 663 - 666
- Pages
- 4
- Journal Title
- IDW '08 - Proceedings of the 15th International Display Workshops
- Volume
- 2
- Start Page
- 663
- End Page
- 666
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/74980
- Abstract
- We designed and fabricated asymmetric-offset structure (AOS) top-gate n-type depletion mode polycrystalline silicon (poly-Si) thin film transistors (TFTs) which suppressed the leakage current considerably and have improved reliability significantly. The TFTs were fabricated on the glass substrates by employing alternating magnetic-field-enhanced rapid thermal annealing (AMFERTA) in order to improve the uniformity compared with widely used excimer laser annealing (ELA). The asymmetric-offset structure TFT can be made without additional doping processes or masks. These structures could greatly suppress the leakage current without sacrifice the ON current with increasing V DS and decreasing VGS. This device structure can be useful for achieving good image quality, high stability, and reducing the power consumption of active matrix organic light-emitting diode (AMOLED) panels.
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Collections - College of Engineering > School of Energy System Engineering > 1. Journal Articles
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