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Surface Etching of TiO2 Thin Films Using High Density Cl-2/Ar Plasma
- Authors
- Woo, Jong-Chang; Joo, Young-Hee; Kim, Chang-Il
- Issue Date
- Dec-2015
- Publisher
- KOREAN INST ELECTRICAL & ELECTRONIC MATERIAL ENGINEERS
- Keywords
- Etching; TiO2; High density plasma; X-ray photoelectron spectroscopy
- Citation
- TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, v.16, no.6, pp 346 - 350
- Pages
- 5
- Journal Title
- TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS
- Volume
- 16
- Number
- 6
- Start Page
- 346
- End Page
- 350
- ISSN
- 1229-7607
2092-7592
- Abstract
- In this study, we carried out an investigation of the etch characteristics of TiO2 thin films and the selectivity of TiO2 to SiO2 in adaptive coupled C1(2)/Ar plasma. The maximum etch rate of the TiO2 thin film was 136 +/- 5 nm/min at a gas mixing ratio of C1(2)/Ar (75%: 25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.
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