Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin-Film Transistors and Complementary Electronics
- Authors
- Liu, Ao; Zhu, Huihui; Park, Won-Tae; Kang, Seok-Ju; Xu, Yong; Kim, Myung-Gil; Noh, Yong-Young
- Issue Date
- Aug-2018
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- inorganic p-type semiconductor; low voltage; room-temperature synthesis; solution process; thin-film transistor
- Citation
- ADVANCED MATERIALS, v.30, no.34
- Journal Title
- ADVANCED MATERIALS
- Volume
- 30
- Number
- 34
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/898
- DOI
- 10.1002/adma.201802379
- ISSN
- 0935-9648
1521-4095
- Abstract
- Here, room-temperature solution-processed inorganic p-type copper iodide (CuI) thin-film transistors (TFTs) are reported for the first time. The spin-coated 5 nm thick CuI film has average hole mobility (mu(FE)) of 0.44 cm(2) V-1 s(-1) and on/off current ratio of 5 x 10(2). Furthermore, mu(FE) increases to 1.93 cm(2) V-1 s(-1) and operating voltage significantly reduces from 60 to 5 V by using a high permittivity ZrO2 dielectric layer replacing traditional SiO2. Transparent complementary inverters composed of p-type CuI and n-type indium gallium zinc oxide TFTs are demonstrated with clear inverting characteristics and voltage gain over 4. These outcomes provide effective approaches for solution-processed inorganic p-type semiconductor inks and related electronics.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Natural Sciences > Department of Chemistry > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.