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Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor
- Authors
- Jang, Young In; Seo, Jae Hwa; Yoon, Young Jun; Eun, Hye Rim; Kwon, Ra Hee; Lee, Jung-Hee; Kwon, Hyuck-In; Kang, In Man
- Issue Date
- Oct-2015
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- AlGaN/GaN; recessed gate; fin-type field-effect transistor (FinFET); 3-D TCAD
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.15, no.5, pp 554 - 562
- Pages
- 9
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 15
- Number
- 5
- Start Page
- 554
- End Page
- 562
- ISSN
- 1598-1657
2233-4866
- Abstract
- This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width (W-fin) and the height of GaN layer (H-GaN) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/ GaN FinFET.
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