Effects of Surface Passivation and Annealing on Electrical Characteristics of Graphene/n-type Silicon Schottky Diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dong-Joo | - |
dc.contributor.author | Umar, Ahmad | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.date.available | 2019-03-08T16:57:57Z | - |
dc.date.issued | 2015-08 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.issn | 1947-2943 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9276 | - |
dc.description.abstract | We report on the effects of surface passivation with a polymethylmethacrylate (PMMA) layer and annealing of a graphene sheet on the electrical characteristics of Au/graphene/n-Si Schottky junction diodes. For this study, single-layer graphene sheets were grown by chemical vapor deposition. The Schottky diodes were fabricated by transferring the graphene sheets directly onto n-type Si substrates. The electrical properties, including the Schottky barrier heights and ideality factors of the Au/Gr/n-Si Schottky diodes, were evaluated using current-voltage and capacitance voltage measurements. With both annealing of the graphene layer at 400 degrees C and surface passivation of the PMMA layer, we found that the graphene/n-Si Schottky diodes showed significantly reduced electrical degradation by preventing H2O and/or O-2 molecules from forming at the interface between the Gr layer and the n-Si substrate. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Effects of Surface Passivation and Annealing on Electrical Characteristics of Graphene/n-type Silicon Schottky Diodes | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/sam.2015.2405 | - |
dc.identifier.bibliographicCitation | SCIENCE OF ADVANCED MATERIALS, v.7, no.8, pp 1451 - 1457 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000358269400001 | - |
dc.identifier.scopusid | 2-s2.0-84931828011 | - |
dc.citation.endPage | 1457 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1451 | - |
dc.citation.title | SCIENCE OF ADVANCED MATERIALS | - |
dc.citation.volume | 7 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | Schottky Junction Diode | - |
dc.subject.keywordAuthor | Passivation | - |
dc.subject.keywordAuthor | Electrical Degradation | - |
dc.subject.keywordPlus | ELECTRONIC TRANSPORT | - |
dc.subject.keywordPlus | THERMAL TRANSPORT | - |
dc.subject.keywordPlus | JUNCTION DIODES | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | BARRIER | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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