Effects of Surface Passivation and Annealing on Electrical Characteristics of Graphene/n-type Silicon Schottky Diodes
- Authors
- Kim, Dong-Joo; Umar, Ahmad; Lee, Sang-Kwon
- Issue Date
- Aug-2015
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Graphene; Schottky Junction Diode; Passivation; Electrical Degradation
- Citation
- SCIENCE OF ADVANCED MATERIALS, v.7, no.8, pp 1451 - 1457
- Pages
- 7
- Journal Title
- SCIENCE OF ADVANCED MATERIALS
- Volume
- 7
- Number
- 8
- Start Page
- 1451
- End Page
- 1457
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9276
- DOI
- 10.1166/sam.2015.2405
- ISSN
- 1947-2935
1947-2943
- Abstract
- We report on the effects of surface passivation with a polymethylmethacrylate (PMMA) layer and annealing of a graphene sheet on the electrical characteristics of Au/graphene/n-Si Schottky junction diodes. For this study, single-layer graphene sheets were grown by chemical vapor deposition. The Schottky diodes were fabricated by transferring the graphene sheets directly onto n-type Si substrates. The electrical properties, including the Schottky barrier heights and ideality factors of the Au/Gr/n-Si Schottky diodes, were evaluated using current-voltage and capacitance voltage measurements. With both annealing of the graphene layer at 400 degrees C and surface passivation of the PMMA layer, we found that the graphene/n-Si Schottky diodes showed significantly reduced electrical degradation by preventing H2O and/or O-2 molecules from forming at the interface between the Gr layer and the n-Si substrate.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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