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The Optical and Electrical Characteristics for ZnO/Al/ZnO Multilayer Films Deposited by RF Sputtering
- Authors
- Lee, Bum-Seok; Joo, Young-Hee; Kim, Chang-Il
- Issue Date
- Jun-2015
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Multilayer Structure; AZO; RF-Sputtering; TCO
- Citation
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.10, no.3, pp 402 - 407
- Pages
- 6
- Journal Title
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
- Volume
- 10
- Number
- 3
- Start Page
- 402
- End Page
- 407
- ISSN
- 1555-130X
1555-1318
- Abstract
- In this paper, we prepared ZnO/Al/ZnO stacked structures thin film by using RF-magnetron sputtering. We analyzed the changing structure of the multilayer film and changing the Al thickness of the ZnO/Al/ZnO multilayer thin film. The lowest resistance was 2.2 x 10(-3) Omega cm for the films in the ZnO/Al/ZnO stacked structure annealed at 600 degrees C and deposited in Al layer thickness was 20 nm. The results for the transmittance of the AZO thin films by UV-VIS obtained more than 85%. We observed the grain size of ZnO/Al/ZnO multilayer thin film by FE-SEM and AFM image at Al layer thickness was 20 nm.
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