Investigation of Electrical Performance Degradation in p-AlGaN Gate Heterostructure Field-Effect Transistors Under Various Off-Stress Conditions
DC Field | Value | Language |
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dc.contributor.author | Choi, Hyo-Seung | - |
dc.contributor.author | Jeong, Hun | - |
dc.contributor.author | Lee, Jeong-Hwan | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.date.available | 2019-03-08T17:37:22Z | - |
dc.date.issued | 2015-06 | - |
dc.identifier.issn | 1555-130X | - |
dc.identifier.issn | 1555-1318 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9537 | - |
dc.description.abstract | We investigate the effects of various off-state stresses on the electrical performance degradation in p-AlGaN gate heterostructure field-effect transistors (HFETs) which are especially devised for the normally-off operation. The devices were stressed under various off-stress conditions and the transfer curves were measured immediately after stresses. When the negative bias stress was applied only to the gate electrode, the drain current (I-D) decreased and the threshold voltage (V-TH) moved to the positive direction. On the other hand, when the devices were stressed at a fixed negative gate voltage with various positive drain voltages, I-D decreased, but V-TH did not move. These degradations are believed to be the results of electron trapping during the off-state stresses, and the observed different phenomena depending on the off-stress conditions may be attributed to the difference of charge trapping locations. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Investigation of Electrical Performance Degradation in p-AlGaN Gate Heterostructure Field-Effect Transistors Under Various Off-Stress Conditions | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jno.2015.1757 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.10, no.3, pp 397 - 401 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000358931600020 | - |
dc.identifier.scopusid | 2-s2.0-84939515482 | - |
dc.citation.endPage | 401 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 397 | - |
dc.citation.title | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | - |
dc.citation.volume | 10 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | p-AlGaN Gate HFETs | - |
dc.subject.keywordAuthor | Off-State Stresses | - |
dc.subject.keywordAuthor | Electrical Performance Degradation | - |
dc.subject.keywordAuthor | Charge Trapping | - |
dc.subject.keywordPlus | RECESSED GATE | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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