Photo-Activated Indium-Strontium-Zinc-Oxide Thin-Film Transistors Using a Strontium Nitrate Precursor
DC Field | Value | Language |
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dc.contributor.author | Lee, Woobin | - |
dc.contributor.author | Lee, Minkyung | - |
dc.contributor.author | Yi, Gyeong Min | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.contributor.author | Kim, Yong-Hoon | - |
dc.date.available | 2019-03-08T17:37:26Z | - |
dc.date.issued | 2015-06 | - |
dc.identifier.issn | 1555-130X | - |
dc.identifier.issn | 1555-1318 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9540 | - |
dc.description.abstract | Photochemically activated indium-strontium-zinc oxide (ISZO) thin-film transistors ( TFTs) are fabricated by using strontium nitrate as a metallic precursor. The formulated ISZO precursor solutions had a broad absorption characteristic in the ultraviolet region as compared to the IGZO precursor solution. Photochemical activation, which is mediated by deep ultraviolet irradiation in N-2 atmosphere, allowed formation of a dense ISZO and ISO semiconductor films at a low temperature. By optimizing the incorporated strontium composition, ISZO TFTs with an average field-effect mobility of 2.15 cm(2)/Vs, on/off ratio of similar to 10(7), and subthreshold slope of 0.71 V/decade were obtained. In addition, we investigated the positive gate-bias stress characteristics of the ISZO TFTs. The fabricated ISZO TFTs exhibited a positive threshold voltage shift similar to that of IGZO TFTs. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Photo-Activated Indium-Strontium-Zinc-Oxide Thin-Film Transistors Using a Strontium Nitrate Precursor | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jno.2015.1751 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.10, no.3, pp 366 - 370 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000358931600014 | - |
dc.identifier.scopusid | 2-s2.0-84939533475 | - |
dc.citation.endPage | 370 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 366 | - |
dc.citation.title | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | - |
dc.citation.volume | 10 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | ISZO | - |
dc.subject.keywordAuthor | Strontium Nitrate | - |
dc.subject.keywordAuthor | Photochemical Activation | - |
dc.subject.keywordAuthor | Thin-Film Transistor | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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