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Highly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol-Gel Metal-Oxide Dielectrics and Semiconductors
- Authors
- Jo, Jeong-Wan; Kim, Jaekyun; Kim, Kyung-Tae; Kang, Jin-Gu; Kim, Myung-Gil; Kim, Kwang-Ho; Ko, Hyungduk; Kim, Yong-Hoon; Park, Sung Kyu
- Issue Date
- Feb-2015
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- Deep UV photo-chemical activation; Flexible metal oxide gate dielectric; Low temperature; Rollable metal oxide TFT; Solution process
- Citation
- ADVANCED MATERIALS, v.27, no.7, pp 1182 - 1188
- Pages
- 7
- Journal Title
- ADVANCED MATERIALS
- Volume
- 27
- Number
- 7
- Start Page
- 1182
- End Page
- 1188
- ISSN
- 0935-9648
1521-4095
- Abstract
- Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process.
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