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Chemical Reaction on Etched TaNO Thin Film as O-2 Content Varies in CF4/Ar Gas Mixing Plasma

ArticleIssue Date2017CitationTRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, v.18, no.2, pp 74 - 77PublisherKOREAN INST ELECTRICAL & ELECTRONIC MATERIAL ENGINEERS

Surface Chemical Reaction on HfO2 Thin Film Etched by High Density Plasma

Kang, Pil-Seung; Woo, Jong-Chang; Joo, Young-Hee; Kim, Chang-Il

ArticleIssue Date2013CitationFERROELECTRICS, v.454, no.1, pp 91 - 98PublisherTAYLOR & FRANCIS LTD

Dry etching of ferroelectric Bi4-xEuxTi3O12 (BET) thin films

Lim, K.T.; Kim, K.T.; Kim, D.P.; Kim, C.I.

ArticleIssue Date2004CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.44, no.5, pp 1113 - 1117PublisherKOREAN PHYSICAL SOC

The etching properties of SBT thin films in BCl3/Cl-2/Ar plasma

Kim, D.P.; Yeo, J.W.; Kim, C.I.

ArticleIssue Date2004CitationTHIN SOLID FILMS, v.459, no.1-2, pp 76 - 81PublisherELSEVIER SCIENCE SA

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