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SCIESCOPUS
A theoretical and experimental investigation of Bragg's rule for energy-loss straggling in low mean energy loss regime in air and its constituentsGo to Link

Qasim, Mirza hussain raza; Shahzadi, Nosheen; Bak, Geunyong; Baeg, Sanghyeon

ArticleIssue Date2021CitationVacuum, v.183, pp 1 - 5PublisherPergamon Press Ltd.
SCISCIESCOPUS
An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiationGo to Link

Khan, Saqib Ali; Lim, Chulseung; Bak, Geunyong; Baeg, Sanghyeon; Lee, Soonyoung

ArticleIssue Date2017CitationMICROELECTRONICS RELIABILITY, v.69, pp 100 - 108PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCIESCOPUS
Ddr4 ber degradation due to crack in fbga package solder ballGo to Linkopen access

Waqar, Muhammad; Bak, Geunyong; Kwon, Junghyeong; Baeg, Sanghyeon

ArticleIssue Date2021CitationElectronics (Switzerland), v.10, no.12, pp 1 - 9PublisherMDPI AG
SCIESCOPUS
Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray RadiationGo to Link

Yun, Donghyuk; Park, Myungsang; Bak, Geunyong; Baeg, Sanghyeon; Wen, Shi-Jie

ArticleIssue Date2021CitationIEEE ACCESS, v.9, pp 137514 - 137523PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Failure Analysis of Galaxy S7 Edge Smartphone Using Neutron RadiationGo to Link

Bak, Geunyong; Baeg, Sanghyeon

ArticleIssue Date2020CitationIEEE Transactions on Nuclear Science, v.67, no.11, pp 2370 - 2381PublisherInstitute of Electrical and Electronics Engineers Inc.
SCISCIESCOPUS
Failure signature analysis of power-opens in DDR3 SDRAMsGo to Link

Li, Tan; Lee, Hosung; Bak, Geunyong; Baeg, Sanghyeon

ArticleIssue Date2018CitationMICROELECTRONICS RELIABILITY, v.88-90, pp 277 - 281PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCIESCOPUS
FBGA solder ball defect effect on DDR4 data signal rise time and ISI measured by loading the data line with a capacitorGo to Link

Waqar, Muhammad; Baeg, Sanghyeon; Bak, Geunyong; Kwon, Junhyeong; Lee, Kiseok; Jeon, Sang woon

ArticleIssue Date2020CitationMicroelectronics Reliability, v.114, pp 1 - 6PublisherElsevier Ltd
SCOPUS
Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beamsGo to Link

Bak, Geunyong; Lee, Soonyoung; Lee, Hosung; Park, Kyungbae; Baeg, Sanghyeon; Wen, Shijie; Wong, Richard; Slayman, Charlie

ArticleIssue Date2015CitationIEEE International Reliability Physics Symposium Proceedings, v.2015, pp SE31 - SE35PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Soft error study on DDR4 SDRAMs using a 480 MeV proton beamGo to Link

Park, Myungsang; Jeon, Sanghoon; Bak, Geunyong; Lim, Chulseung; Baeg, Sanghyeon; Wen, Shijie; Wong, Richard; Yu, Nick

ArticleIssue Date2017CitationIEEE International Reliability Physics Symposium Proceedings, pp 1 - 6PublisherInstitute of Electrical and Electronics Engineers Inc.
SCISCIESCOPUS
Stuck Bits Study in DDR3 SDRAMs Using 45-MeV Proton BeamGo to Link

Lim, Chulseung; Jeong, Hyun Soo; Bak, Geunyong; Baeg, Sanghyeon; Wen, Shi-Jie; Wong, Richard

ArticleIssue Date2015CitationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.62, no.2, pp 520 - 526PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Study of proton radiation effect to row hammer fault in DDR4 SDRAMsGo to Link

Lim, Chulseung; Park, Kyungbae; Bak, Geunyong; Yun, Donghyuk; Park, Myungsang; Baeg, Sanghyeon; Wen, Shi-Jie; Wong, Richard

ArticleIssue Date2018CitationMICROELECTRONICS RELIABILITY, v.80, pp 85 - 90PublisherPERGAMON-ELSEVIER SCIENCE LTD
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