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Showing results 1 to 14 of 14

SCISCIESCOPUS
A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenationGo to Link

Park, Byung-Guon; Lee, Sang-Tae; Reddeppa, Maddaka; Kim, Moon-Deock; Oh, Jae-Eung; Lee, Sang-Kwon

ArticleIssue Date2017CitationNANOTECHNOLOGY, v.28, no.36PublisherIOP PUBLISHING LTD
SCISCIESCOPUS
A Study on Strain and Shape of GaN Nanorods with Variation of Si Concentration Grown on Patterned Si(111) SubstratesGo to Link

Park, Byung-Guon; Kumar, R. Saravana; Lee, Sang-Tae; Kim, Moon-Deock; Oh, Jae-Eung; Kim, Song-Gang; Kim, Tae-Geun

ArticleIssue Date2016CitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.11, pp 11486 - 11489PublisherAMER SCIENTIFIC PUBLISHERS
SCISCIESCOPUS
Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diodeGo to Link

Peta, Koteswara Rao; Park, Byung-Guon; Lee, Sang-Tae; Kim, Moon-Deock; Oh, Jae-Eung; Kim, Tae-Geun; Reddy, V. Rajagopal

ArticleIssue Date2013CitationTHIN SOLID FILMS, v.534, pp 603 - 608PublisherELSEVIER SCIENCE SA
SCISCIESCOPUS
Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studiesGo to Link

Rao, Peta Koteswara; Park, Byungguon; Lee, Sang-Tae; Noh, Young-Kyun; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2011CitationJOURNAL OF APPLIED PHYSICS, v.110, no.1PublisherAMER INST PHYSICS
SCISCIESCOPUSKCI
Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayerGo to Link

Lee, Sang-Tae; Park, Byung-Guon; Kim, Moon-Deock; Oh, Jae-Eung; Kim, Song-Gang; Kim, Young-Heon; Yang, Woo-Chul

ArticleIssue Date2012CitationCURRENT APPLIED PHYSICS, v.12, no.2, pp 385 - 388PublisherELSEVIER SCIENCE BV
SCISCIESCOPUS
Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111)Go to Link

Peta, Koteswara Rao; Lee, Sang-Tae; Kim, Moon-Deock; Oh, Jae-Eung; Kim, Song-Gang; Kim, Tae-Geun

ArticleIssue Date2013CitationJOURNAL OF CRYSTAL GROWTH, v.378, pp 299 - 302PublisherELSEVIER SCIENCE BV
SCISCIESCOPUS
High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (110) Si substrates grown by ammonia molecular beam epitaxyGo to Link

Noh, Young-Kyun; Lee, Sang-Tae; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2019CitationJOURNAL OF CRYSTAL GROWTH, v.509, pp 141 - 145PublisherELSEVIER SCIENCE BV
SCISCIESCOPUSKCI
Influence of an embedded low-temperature AlN strain relaxation layer on the strain states and the buffer characteristics of GaN films grown on (110) Si substrates by using ammonia molecular beam epitaxyGo to Link

Noh, Young-Kyun; Kwon, Han-Chul; Oh, Jae-Eung; Lee, Sang-Tae; Kim, Moon-Deock

ArticleIssue Date2015CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.66, no.11, pp 1766 - 1770PublisherKOREAN PHYSICAL SOC
SCISCIESCOPUS
Influence of growth parameters on the optical properties of selective area grown GaN nanorods by plasma-assisted molecular beam epitaxyGo to Link

Lee, Sang-Tae; Kumar, R. Saravana; Jeon, Seung-Ki; Kim, Moon-Deock; Kim, Song-Gang; Oh, Jae-Eung

ArticleIssue Date2014CitationJOURNAL OF LUMINESCENCE, v.151, pp 188 - 192PublisherELSEVIER SCIENCE BV
SCISCIESCOPUSKCI
Influence of p-GaN shape on the light emission characteristics of InGaN nanodisk embedded p-i-n GaN nanorodsGo to Link

Park, Byung-Guon; Kumar, R. Saravana; Lee, Sang-Tae; Moon, Mee-Lim; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2015CitationCURRENT APPLIED PHYSICS, v.15, no.supple.2, pp S2 - S6PublisherELSEVIER
SCISCIESCOPUSKCI
Optical and crystal properties of ammonia MBE-grown GaN layers on plasma-assisted MBE-grown AlN/Si (110) substratesGo to Link

Noh, Young-Kyun; Park, Chul-Hyun; Lee, Sang-Tae; Kim, Kyung-Jin; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2014CitationCURRENT APPLIED PHYSICS, v.14, no.supple.1, pp S29 - S33PublisherELSEVIER SCIENCE BV
SCISCIESCOPUSKCI
Temperature- and Al/N ratio-dependent AlN seed layer formation on (110) Si substrates by using plasma-assisted molecular beam epitaxyGo to Link

Noh, Young-Kyun; Park, Chul-Hyun; Oh, Jae-Eung; Lee, Sang-Tae; Kim, Moon-Deock

ArticleIssue Date2014CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.64, no.10, pp 1577 - 1580PublisherKOREAN PHYSICAL SOC
SCISCIESCOPUS
Temperature-dependent electrical properties of (Pt/Au)/Ga-polarity GaN/Si(111) Schottky diodeGo to Link

Peta, Koteswara Rao; Park, Byung-Guon; Lee, Sang-Tae; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2012CitationMICROELECTRONIC ENGINEERING, v.93, pp 100 - 104PublisherELSEVIER SCIENCE BV
SCIESCOPUS
The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation terminationGo to Link

Ko, Kwang-Man; Seo, Jung-Han; Kim, Dong-Eun; Lee, Sang-Tae; Noh, Young-Kyun; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2009CitationNANOTECHNOLOGY, v.20, no.22PublisherIOP PUBLISHING LTD
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