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SCISCIESCOPUS
A novel low-temperature resistive NO gas sensor based on InGaN/GaN multi-quantum well-embedded p-i-n GaN nanorodsGo to Link

Reddeppa, Maddaka; Park, Byung-Guon; Nguyen Duc Chinh; Kim, Dojin; Oh, Jae-Eung; Kim, Tae Geun; Kim, Moon-Deock

ArticleIssue Date2019CitationDALTON TRANSACTIONS, v.48, no.4, pp 1367 - 1375PublisherROYAL SOC CHEMISTRY
SCISCIESCOPUS
A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenationGo to Link

Park, Byung-Guon; Lee, Sang-Tae; Reddeppa, Maddaka; Kim, Moon-Deock; Oh, Jae-Eung; Lee, Sang-Kwon

ArticleIssue Date2017CitationNANOTECHNOLOGY, v.28, no.36PublisherIOP PUBLISHING LTD
SCISCIESCOPUS
A Study on Strain and Shape of GaN Nanorods with Variation of Si Concentration Grown on Patterned Si(111) SubstratesGo to Link

Park, Byung-Guon; Kumar, R. Saravana; Lee, Sang-Tae; Kim, Moon-Deock; Oh, Jae-Eung; Kim, Song-Gang; Kim, Tae-Geun

ArticleIssue Date2016CitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.11, pp 11486 - 11489PublisherAMER SCIENTIFIC PUBLISHERS
SCISCIESCOPUS
Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diodeGo to Link

Peta, Koteswara Rao; Park, Byung-Guon; Lee, Sang-Tae; Kim, Moon-Deock; Oh, Jae-Eung; Kim, Tae-Geun; Reddy, V. Rajagopal

ArticleIssue Date2013CitationTHIN SOLID FILMS, v.534, pp 603 - 608PublisherELSEVIER SCIENCE SA
SCISCIESCOPUSKCI
Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayerGo to Link

Lee, Sang-Tae; Park, Byung-Guon; Kim, Moon-Deock; Oh, Jae-Eung; Kim, Song-Gang; Kim, Young-Heon; Yang, Woo-Chul

ArticleIssue Date2012CitationCURRENT APPLIED PHYSICS, v.12, no.2, pp 385 - 388PublisherELSEVIER SCIENCE BV
SCIESCOPUS
Current–voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetectorGo to Link

Reddeppa, Maddaka; Park, Byung-Guon; Pasupuleti, Kedhareswara Sairam; Nam, Dong-Jin; Kim, Song-Gang; Oh, Jae-Eung; Kim, Moon-Deock

ArticleIssue Date2021CitationSemiconductor Science and Technology, v.36, no.3, pp 1 - 18PublisherInstitute of Physics Publishing
SCISCIESCOPUS
Effects of reduced internal electric field in InGaN/pseudo-AlInGaN multi-quantum-well on forward leakage current and photocurrent propertiesGo to Link

Park, Byung-Guon; Maddaka, Reddeppa; Nguyen, Thi Kim Phung; Peta, Koteswara Rao; Noh, Young-Kyun; Oh, Jae-Eung; Kim, Moon-Deock

ArticleIssue Date2019CitationJOURNAL OF APPLIED PHYSICS, v.126, no.4PublisherAMER INST PHYSICS
SCIESCOPUS
Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorodsGo to Link

Reddeppa, Maddaka; Park, Byung-Guon; Majumder, Sutripto; Kim, Young Heon; Oh, Jae-Eung; Kim, Song-Gang; Kim, Dojin; Kim, Moon-Deock

ArticleIssue Date2020CitationNANOTECHNOLOGY, v.31, no.47PublisherIOP PUBLISHING LTD
SCISCIESCOPUSKCI
Improved Schottky behavior of GaN nanorods using hydrogen plasma treatmentGo to Link

Reddeppa, Maddaka; Park, Byung-Guon; Lee, Sang Tae; Nguyen Hoang Hai; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2017CitationCURRENT APPLIED PHYSICS, v.17, no.2, pp 192 - 196PublisherELSEVIER
SCISCIESCOPUSKCI
Influence of p-GaN shape on the light emission characteristics of InGaN nanodisk embedded p-i-n GaN nanorodsGo to Link

Park, Byung-Guon; Kumar, R. Saravana; Lee, Sang-Tae; Moon, Mee-Lim; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2015CitationCURRENT APPLIED PHYSICS, v.15, no.supple.2, pp S2 - S6PublisherELSEVIER
SCISCIESCOPUS
Temperature-dependent electrical properties of (Pt/Au)/Ga-polarity GaN/Si(111) Schottky diodeGo to Link

Peta, Koteswara Rao; Park, Byung-Guon; Lee, Sang-Tae; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2012CitationMICROELECTRONIC ENGINEERING, v.93, pp 100 - 104PublisherELSEVIER SCIENCE BV
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