Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods
- Authors
- Reddeppa, Maddaka; Park, Byung-Guon; Majumder, Sutripto; Kim, Young Heon; Oh, Jae-Eung; Kim, Song-Gang; Kim, Dojin; Kim, Moon-Deock
- Issue Date
- Nov-2020
- Publisher
- IOP PUBLISHING LTD
- Keywords
- InGaN; GaN SQW NRs; optical properties; photoelectrochemical properties; defect passivation
- Citation
- NANOTECHNOLOGY, v.31, no.47
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 31
- Number
- 47
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/753
- DOI
- 10.1088/1361-6528/aba301
- ISSN
- 0957-4484
1361-6528
- Abstract
- Recently, III-nitride semiconductor nanostructures, especially InGaN/GaN quantum well nanorods (NRs), have been established as a promising material of choice for nanoscale optoelectronics and photoelectrochemical (PEC) water-splitting applications. Due to the large number of surface states, III-nitride NRs suffer from low quantum efficiency. Therefore, control of the surface states is necessary to improve device performance in real-time applications. In this work, we investigated the effect of hydrogen plasma treatment on the optical properties of InGaN/GaN single-quantum-well (SQW) NRs. The low-temperature photoluminescence (PL) studies revealed that yellow and green emissions overlapped and the yellow band is more dominant in the pristine InGaN/GaN SQW NRs. However, the emission corresponding to yellow luminescence was strongly suppressed and the green emission is more intensified in hydrogenated InGaN/GaN SQW NRs. Furthermore, the time-resolved PL spectroscopy studies revealed that the carrier lifetimes of hydrogenated InGaN/GaN SQW NRs are relatively short compared to the pristine InGaN/GaN SQW, indicating the effective reduction of non-radiative centers. From the PEC measurement, the photocurrent density of hydrogenated InGaN/GaN SQW NRs in the H(2)SO(4)solution is found to be 5 mA cm(-2)at -0.48 V versus reversible hydrogen electrode, which is 3.5-fold larger than that of pristine ones. These findings shed new light on the significance of surface treatment on the optical properties and thus nanostructured photoelectrodes for PEC applications.
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