Impurity and silicate formation dependence on O-3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films
- Authors
- Park, Tae Joo; Byun, Young-Chul; Wallace, Robert M.; Kim, Jiyoung
- Issue Date
- Feb-2017
- Publisher
- American Institute of Physics
- Citation
- Journal of Chemical Physics, v.146, no.5, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Chemical Physics
- Volume
- 146
- Number
- 5
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/10173
- DOI
- 10.1063/1.4975083
- ISSN
- 0021-9606
- Abstract
- Atomic-layer-deposited La2O3 films were grown on Si with different O-3 pulse times and growth temperatures. The interfacial reactions and impurity behaviors were observed using in situ X-ray photoelectron spectroscopy. Longer pulse time of O-3 formed the solid SiO2 interfacial barrier layer, which suppressed La-silicate formation. Meanwhile, the carboxyl compound acting as an impurity phase was replaced with LaCO3 on increasing the O-3 pulse time due to further oxidation and reaction of La. Higher growth temperatures enhanced La-silicate formation by mixed diffusion of Si and La2O3, during which most of the La2O3 phase was consumed at 400 degrees C. C and N impurities decreased with increasing growth temperature and completely disappear at 400 degrees C. Published by AIP Publishing.
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