Surface-modified quantum-dot floating layer using novel thiol with large dipole moment for improved feasibility of light-erasable organic transistor memory applications
- Authors
- Kim, Cheulhwan; Kim, Jae Young; Lee, Kanghuck; Jung, Sun Young; Yun, Dong-Jin; An, Tae Kyu; Lee, Hwa Sung; Jeong, Yong Jin; Lee, Jihoon
- Issue Date
- May-2020
- Publisher
- 한국공업화학회
- Keywords
- Optical transistor memory; CdSe; Quantum dots; Fluorinated thiol; Dipole moment; Photo-induced recovery
- Citation
- Journal of Industrial and Engineering Chemistry, v.85, pp.111 - 117
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of Industrial and Engineering Chemistry
- Volume
- 85
- Start Page
- 111
- End Page
- 117
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/1092
- DOI
- 10.1016/j.jiec.2020.01.031
- ISSN
- 1226-086X
- Abstract
- In this study, a new functional thiol with a pentafluorophenyl group was synthesized for the surface modification of CdSe quantum-dot floating layers; this was aimed at the fabrication of organic field-effect transistors (OFETs). The dipole moments and surface properties of the fluorinated thiols were used to control the transistor operations; these thiols acted as surface modifiers of the CdSe quantum-dot floating layers in the OFETs. Further, the new functional thiol exhibited a larger dipole moment than that of the commercial 2,3,4,5,6-pentafluorothiophenol. The OFET comprising the new functional thiol with the pentafluorophenyl group functioned as a normally ON transistor and exhibited bistable current states during nondestructive reading. In addition, it exhibited sensitive responses to electrical-only and lightonly biases, which demonstrates its feasibility for light-responsive flash memory applications. (C) 2020 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.
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