Effect of Defects on Strain Relaxation in InGaN/AlGaN Multiple-Quantum-Well Near-Ultraviolet Light-Emitting Diodes
- Authors
- Islam, Abu Bashar Mohammad Hamidul; Shim, Jong-In; Shin, Dong-Soo; Kwak, Joon Seop
- Issue Date
- Jan-2022
- Publisher
- Wiley - V C H Verlag GmbbH & Co.
- Keywords
- defects; electroreflectance; light-emitting diodes; piezoelectric field; strain relaxation
- Citation
- Physica Status Solidi (A) Applications and Materials, v.219, no.2, pp 1 - 7
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- Physica Status Solidi (A) Applications and Materials
- Volume
- 219
- Number
- 2
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/111033
- DOI
- 10.1002/pssa.202100418
- ISSN
- 1862-6300
1862-6319
- Abstract
- Three similar-structure InGaN/AlGaN multiple-quantum-well near-ultraviolet (NUV) light-emitting diodes (LEDs) are utilized to investigate the microscopic effect of defects on strain relaxation. Consistent correlations among the crystal quality, the piezoelectric field (F-PZ), the internal quantum efficiency (IQE), and the bandgap shrinkage of NUV LEDs are obtained by investigating the macroscopic characterizations. The difference in crystal quality (or the defect density) of NUV LEDs is found by the ideality factor, the emission microscope image, the Shockley-Read-Hall coefficient, and the IQE. Electroreflectance spectra are used to calculate F-PZ of NUV LEDs. F-PZ, the IQE, and the peak-wavelength shift at driving currents are increased with the samples' crystal quality compared to the reference sample. Also, F-PZ, the IQE, and the peak-wavelength shift are decreased with the increase in samples' defect densities. A similar result is found for the bandgap shrinkage. This effect significantly indicates that the strain relaxation is induced by defects. Herein, a model that systematically explains the observed changes in macroscopic properties of NUV LEDs is proposed.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/111033)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.