Area-selective atomic layer deposition of high-quality Ru thin films by chemo-selective adsorption of short alkylating agents
DC Field | Value | Language |
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dc.contributor.author | Lee, Jeong-Min | - |
dc.contributor.author | Lee, Seo-Hyun | - |
dc.contributor.author | Oh, Jieun | - |
dc.contributor.author | Kim, Woo -Hee | - |
dc.date.accessioned | 2023-02-07T00:51:31Z | - |
dc.date.available | 2023-02-07T00:51:31Z | - |
dc.date.created | 2023-02-01 | - |
dc.date.issued | 2023-02 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/111465 | - |
dc.description.abstract | We report the effects of surface modification by vapor dosing of (N,N-diethylamino)trimethylsilane (DEATMS) molecules as short alkylating agents on technologically important substrates of Si, SiO2, TiN, and W. In this study, tricarbonyl(trimethylenemethane) ruthenium [Ru(TMM)(CO)3] was employed as a metal-organic pre-cursor for atomic layer deposition (ALD) of Ru, which produced high-quality Ru films with significantly low resistivity and high growth -per-cycle. Through surface modification of vapor-dosed DEATMS molecules, signif-icant growth retardation against the ALD Ru process was selectively found on SiO2 and TiN in contrast to Si(-H) and W substrates. With applying chemo-selectively inhibitory characteristics, we successfully demonstrate area selective deposition of ALD Ru films on a patterned TiN/Si substrate. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Area-selective atomic layer deposition of high-quality Ru thin films by chemo-selective adsorption of short alkylating agents | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Woo -Hee | - |
dc.identifier.doi | 10.1016/j.matlet.2022.133574 | - |
dc.identifier.scopusid | 2-s2.0-85143886636 | - |
dc.identifier.wosid | 000898672400007 | - |
dc.identifier.bibliographicCitation | MATERIALS LETTERS, v.333 | - |
dc.relation.isPartOf | MATERIALS LETTERS | - |
dc.citation.title | MATERIALS LETTERS | - |
dc.citation.volume | 333 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Ruthenium | - |
dc.subject.keywordAuthor | Area-selective atomic layer deposition | - |
dc.subject.keywordAuthor | Aminosilane inhibitor | - |
dc.subject.keywordAuthor | Surface modification | - |
dc.subject.keywordAuthor | Growth retardation | - |
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