Area-selective atomic layer deposition of high-quality Ru thin films by chemo-selective adsorption of short alkylating agents
- Authors
- Lee, Jeong-Min; Lee, Seo-Hyun; Oh, Jieun; Kim, Woo -Hee
- Issue Date
- Feb-2023
- Publisher
- ELSEVIER
- Keywords
- Ruthenium; Area-selective atomic layer deposition; Aminosilane inhibitor; Surface modification; Growth retardation
- Citation
- MATERIALS LETTERS, v.333
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS LETTERS
- Volume
- 333
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/111465
- DOI
- 10.1016/j.matlet.2022.133574
- ISSN
- 0167-577X
- Abstract
- We report the effects of surface modification by vapor dosing of (N,N-diethylamino)trimethylsilane (DEATMS) molecules as short alkylating agents on technologically important substrates of Si, SiO2, TiN, and W. In this study, tricarbonyl(trimethylenemethane) ruthenium [Ru(TMM)(CO)3] was employed as a metal-organic pre-cursor for atomic layer deposition (ALD) of Ru, which produced high-quality Ru films with significantly low resistivity and high growth -per-cycle. Through surface modification of vapor-dosed DEATMS molecules, signif-icant growth retardation against the ALD Ru process was selectively found on SiO2 and TiN in contrast to Si(-H) and W substrates. With applying chemo-selectively inhibitory characteristics, we successfully demonstrate area selective deposition of ALD Ru films on a patterned TiN/Si substrate.
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Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
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