Area-selective atomic layer deposition of Ru thin films using phosphonic acid self-assembled monolayers for metal/dielectric selectivity
DC Field | Value | Language |
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dc.contributor.author | Lee, Seo-Hyun | - |
dc.contributor.author | Lee, Jeong-Min | - |
dc.contributor.author | Lee, Ji Hun | - |
dc.contributor.author | Kwak, Junghun | - |
dc.contributor.author | Chung, Sung-Woong | - |
dc.contributor.author | Kim, Woo - Hee | - |
dc.date.accessioned | 2023-05-03T09:38:12Z | - |
dc.date.available | 2023-05-03T09:38:12Z | - |
dc.date.issued | 2022-12 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.issn | 1873-4979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/112647 | - |
dc.description.abstract | We comparatively investigate inhibitory efficacy of four different phosphonic acid (PA) SAMs, octadecylphos-phonic acid (ODPA), octylphosphonic acid (OPA), ethylphosphonic acid (EPA), and phenylphosphonic acid (PPA) on TiN and W versus SiO2 for technologically important metal/dielectric selectivity. Herein, blocking ability of various PA SAM-treated surfaces was evaluated by using Ru atomic layer deposition (ALD) as a representative model process toward metal/dielectric selectivity. Although chemo-selective adsorption features of PA SAMs were obtained on TiN and W relative to SiO2, their blocking quality was shown to improve with increasing alkyl chain lengths via strong van der Waals interactions between adjacent SAMs. With the best ef-ficacy of ODPA SAMs, we successfully demonstrated area selective ALD (AS-ALD) of Ru thin films over 15 nm on patterned TiN/SiO2 surfaces. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Elsevier BV | - |
dc.title | Area-selective atomic layer deposition of Ru thin films using phosphonic acid self-assembled monolayers for metal/dielectric selectivity | - |
dc.type | Article | - |
dc.publisher.location | 네델란드 | - |
dc.identifier.doi | 10.1016/j.matlet.2022.133187 | - |
dc.identifier.scopusid | 2-s2.0-85138035742 | - |
dc.identifier.wosid | 000867683000008 | - |
dc.identifier.bibliographicCitation | Materials Letters, v.328, pp 1 - 4 | - |
dc.citation.title | Materials Letters | - |
dc.citation.volume | 328 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | AS-ALD | - |
dc.subject.keywordAuthor | Phosphonic acid SAMs | - |
dc.subject.keywordAuthor | Blocking capability | - |
dc.subject.keywordAuthor | Metal | - |
dc.subject.keywordAuthor | dielectric selectivity | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167577X22015427?via%3Dihub | - |
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