Area-selective atomic layer deposition of Ru thin films using phosphonic acid self-assembled monolayers for metal/dielectric selectivity
- Authors
- Lee, Seo-Hyun; Lee, Jeong-Min; Lee, Ji Hun; Kwak, Junghun; Chung, Sung-Woong; Kim, Woo - Hee
- Issue Date
- Dec-2022
- Publisher
- Elsevier BV
- Keywords
- AS-ALD; Phosphonic acid SAMs; Blocking capability; Metal; dielectric selectivity
- Citation
- Materials Letters, v.328, pp 1 - 4
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Materials Letters
- Volume
- 328
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/112647
- DOI
- 10.1016/j.matlet.2022.133187
- ISSN
- 0167-577X
1873-4979
- Abstract
- We comparatively investigate inhibitory efficacy of four different phosphonic acid (PA) SAMs, octadecylphos-phonic acid (ODPA), octylphosphonic acid (OPA), ethylphosphonic acid (EPA), and phenylphosphonic acid (PPA) on TiN and W versus SiO2 for technologically important metal/dielectric selectivity. Herein, blocking ability of various PA SAM-treated surfaces was evaluated by using Ru atomic layer deposition (ALD) as a representative model process toward metal/dielectric selectivity. Although chemo-selective adsorption features of PA SAMs were obtained on TiN and W relative to SiO2, their blocking quality was shown to improve with increasing alkyl chain lengths via strong van der Waals interactions between adjacent SAMs. With the best ef-ficacy of ODPA SAMs, we successfully demonstrated area selective ALD (AS-ALD) of Ru thin films over 15 nm on patterned TiN/SiO2 surfaces.
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