Nondestructive Direct Photolithography for Patterning Quantum Dot Films by Atomic Layer Deposition of ZnO
- Authors
- Lee, Joon Yup; Kim, Eun A; Han, Jisu; Choi, Yeong-Ho; Hahm, Donghyo; Kang, Chi Jung; Bae, Wan Ki; Lim, Jaehoon; Cho, Seong-Yong
- Issue Date
- Aug-2022
- Publisher
- John Wiley and Sons Ltd
- Keywords
- atomic layer deposition; InP quantum dot; patterning quantum dot films; photolithography; quantum dot-based light emitting diodes
- Citation
- Advanced Materials Interfaces, v.9, no.22, pp 1 - 8
- Pages
- 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- Advanced Materials Interfaces
- Volume
- 9
- Number
- 22
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/112922
- DOI
- 10.1002/admi.202200835
- ISSN
- 2196-7350
- Abstract
- Colloidal quantum dot-based light-emitting diodes (QD-LEDs) are one of the potential future self-emissive displays owing to their large-scale solution-processibility and high color purity. For the industrial application of QD-LEDs, high-performance QD-LED and high-resolution patterning of quantum dot (QD) films are required. Photolithography is an ideal tool for patterning QD films. Previously, the high-resolution patterning of QD films using direct photolithography by ultra-thin atomic layer deposition of ZnO on the QD surface is reported. The patterning process is acceptable for Cd-based QD films, but the photoresist severely deteriorates the photoluminescence (PL) intensity of InP-based QD films owing to the presence of sulfonic groups in the photoactive compound. Herein, a non-destructive direct photolithography process for QD film patterning using a negative photoresist that does not affect the PL intensities of Cd- and InP-based QD films is reported. The effect of the photoresist is also verified by a PL lifetime study. Extremely bright Cd- and InP-based QD films are successfully patterned using a softer photoresist, and micropatterning of InP-based QD films is reported for the first time in this work using photolithography. A QD electroluminescence device is also successfully fabricated using the patterning method. © 2022 Wiley-VCH GmbH.
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