A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode With a Spherically Uniform Electric Field Peak
- Authors
- Van Sieleghem, Edward; Suss, Andreas; Boulenc, Pierre; Lee, Jiwon; Karve, Gauri; De Munck, Koen; Cavaco, Celso; Van Hoof, Chris
- Issue Date
- Mar-2021
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- CMOS integrated circuit; near-infrared enhanced SPAD; Single-photon avalanche diode (SPAD); spherically uniform field peak; time-of-flight (ToF)
- Citation
- IEEE Electron Device Letters, v.42, no.6, pp 879 - 882
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Electron Device Letters
- Volume
- 42
- Number
- 6
- Start Page
- 879
- End Page
- 882
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113778
- DOI
- 10.1109/LED.2021.3070691
- ISSN
- 0741-3106
1558-0563
- Abstract
- A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized $0.13~\mu \text{m}$ CMOS technology is presented. The SPAD has a depleted absorption volume of approximately $15\,\,\mu \text{m}\,\,\times 15\,\,\mu \text{m}\,\,\times 18\,\,\mu \text{m}$. Electrons generated in the absorption region are efficiently transported by drift to a central active avalanche region with a diameter of $2~\mu \text{m}$. At the operating voltage, the active region contains a spherically uniform field peak, enabling the multiplication of electrons originating from all corners of the device. The advantages of the SPAD architecture include high NIR photon detection efficiency (PDE), drift-based transport, low afterpulsing, and compatibility with an integrated CMOS readout. A front-side illuminated device is fabricated and characterized. The SPAD has a PDE of 13% at wavelength 905 nm, an afterpulsing probability < 0.1% for a dead time of 13 ns, and a median dark count rate (DCR) of 840 Hz at room temperature. The device shows promising performance for time-of-flight applications that benefit from uniform NIR-sensitive SPAD arrays. © 1980-2012 IEEE.
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