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A 10-Gb/s, 0.03-mm2, 1.28-pJ/bit Half-Rate Injection-Locked CDR With Path Mismatch Tracking Loop in a 28-nm CMOS Technology

Authors
Choo, Min-SeongPark, KwanseoKo, Han-GonCho, Sung-YongLee, KwanghoJeong, Deog-Kyoon
Issue Date
Oct-2019
Publisher
Institute of Electrical and Electronics Engineers
Keywords
Clock and data recovery (CDR); half rate; injection-locked CDR (ILCDR); injection-locked oscillator (ILO); jitter tolerance (JTOL); path mismatch tracking
Citation
IEEE Journal of Solid-State Circuits, v.54, no.10, pp 2812 - 2822
Pages
11
Indexed
SCI
SCIE
SCOPUS
Journal Title
IEEE Journal of Solid-State Circuits
Volume
54
Number
10
Start Page
2812
End Page
2822
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/114206
DOI
10.1109/JSSC.2019.2917833
ISSN
0018-9200
1558-173X
Abstract
A 10-Gb/s, 0.03-mm2, 1.28-pJ/bit half-rate all-digital injection-locked clock and data recovery (ILCDR) with a path mismatch tracking (PMT) loop is presented. When injection timing is not perfectly aligned with the phase of the oscillator, the timing margin of the data sampler is reduced, resulting in the degradation of jitter tolerance (JTOL) performance. The proposed ILCDR achieves robust injection behavior over path mismatch variations by correlating the error information from the phase detector (PD) in the conventional phase-locked loop (PLL)-based CDR with the polarity of the data transition, thereby adapting the path delay of the injection pulse and placing it at the optimum timing. Fabricated in 28-nm CMOS technology, the proposed ILCDR occupies 0.03 mm2 and consumes 12.8 mW at 10 Gb/s with a 0.9-V supply voltage. The measured JTOL is 1 UIpp at 31 MHz with the target bit error rate (BER) of 10-12 in the presence of the initial path delay mismatch. © 1966-2012 IEEE.
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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