Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors
- Authors
- Kim, Joo Hyun; Han, Singu; Jeong, Heejeong; Jang, Hayeong; Baek, Seolhee; Hu, Junbeom; Lee, Myungkyun; Choi, Byungwoo; Lee, Hwa Sung
- Issue Date
- Feb-2017
- Publisher
- American Chemical Society
- Keywords
- gradient thermal distribution; n-type organic semiconductor; organic field-effect transistor; thermal annealing; vacuum deposition
- Citation
- ACS Applied Materials and Interfaces, v.9, no.11, pp.9910 - 9917
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS Applied Materials and Interfaces
- Volume
- 9
- Number
- 11
- Start Page
- 9910
- End Page
- 9917
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11565
- DOI
- 10.1021/acsami.6b15981
- ISSN
- 1944-8244
- Abstract
- A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N′-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm2 V-1 s-1, more than a factor of 2 higher than the mobility of 0.25 cm2 V-1 s-1 submitted to conventional thermal annealing and the mobility of 0.29 cm2 V-1 s-1 from the horizontally applied temperature gradient. © 2017 American Chemical Society.
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