A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jo, Hyunjin | - |
dc.contributor.author | Choi, Jeong Hun | - |
dc.contributor.author | Hyun, Cheol Min | - |
dc.contributor.author | Seo, Seung Young | - |
dc.contributor.author | Kim, Da Young | - |
dc.contributor.author | Kim, Chang Min | - |
dc.contributor.author | Lee, Myoung Jae | - |
dc.contributor.author | Kwon, Jung Dae | - |
dc.contributor.author | Moon, Hyoung Seok | - |
dc.contributor.author | Kwon, Se Hun | - |
dc.contributor.author | Ahn, Ji-Hoon | - |
dc.date.accessioned | 2021-06-22T15:22:54Z | - |
dc.date.available | 2021-06-22T15:22:54Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2017-10 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11600 | - |
dc.description.abstract | We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al2O3 passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well as research on the fundamental physical properties of channel materials; however, they suffer from inherent unwanted leakage currents between electrodes, especially for channel materials with low off-currents. Therefore, the Al2O3 passivation layer was introduced between the metal electrodes and ion gel film as a leakage current barrier; this simple approach effectively reduced the leakage current without capacitance degradation. In addition, we confirmed that a monolayer MoS2 transistor fabricated with the proposed hybrid gate dielectric exhibited remarkably enhanced device properties compared to a transistor using a normal ion gel gate dielectric. Our findings on a simple method to improve the leakage current properties of ion gels could be applied extensively to realize high-performance electric-double-layer transistors utilizing various channel materials. © 2017 The Author(s). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Nature Publishing Group | - |
dc.title | A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Ji-Hoon | - |
dc.identifier.doi | 10.1038/s41598-017-14649-6 | - |
dc.identifier.scopusid | 2-s2.0-85032435754 | - |
dc.identifier.wosid | 000413907000017 | - |
dc.identifier.bibliographicCitation | Scientific Reports, v.7, no.1, pp.1 - 6 | - |
dc.relation.isPartOf | Scientific Reports | - |
dc.citation.title | Scientific Reports | - |
dc.citation.volume | 7 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | FILM TRANSISTORS | - |
dc.subject.keywordPlus | LOW-POWER | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | CAPACITANCE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | AL2O3 | - |
dc.subject.keywordPlus | WS2 | - |
dc.identifier.url | https://www.nature.com/articles/s41598-017-14649-6 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.