A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channelsopen access
- Authors
- Jo, Hyunjin; Choi, Jeong Hun; Hyun, Cheol Min; Seo, Seung Young; Kim, Da Young; Kim, Chang Min; Lee, Myoung Jae; Kwon, Jung Dae; Moon, Hyoung Seok; Kwon, Se Hun; Ahn, Ji-Hoon
- Issue Date
- Oct-2017
- Publisher
- Nature Publishing Group
- Citation
- Scientific Reports, v.7, no.1, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Scientific Reports
- Volume
- 7
- Number
- 1
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11600
- DOI
- 10.1038/s41598-017-14649-6
- ISSN
- 2045-2322
- Abstract
- We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al2O3 passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well as research on the fundamental physical properties of channel materials; however, they suffer from inherent unwanted leakage currents between electrodes, especially for channel materials with low off-currents. Therefore, the Al2O3 passivation layer was introduced between the metal electrodes and ion gel film as a leakage current barrier; this simple approach effectively reduced the leakage current without capacitance degradation. In addition, we confirmed that a monolayer MoS2 transistor fabricated with the proposed hybrid gate dielectric exhibited remarkably enhanced device properties compared to a transistor using a normal ion gel gate dielectric. Our findings on a simple method to improve the leakage current properties of ion gels could be applied extensively to realize high-performance electric-double-layer transistors utilizing various channel materials. © 2017 The Author(s).
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