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Reliability of coplanar oxide TFTs: Analysis and improvement
- Authors
- Baeck, Ju heyuck; Oh, Saeroonter; Lee, Dohyung; Park, Taeuk park; Bae, Jong uk; Park, Kwon shik; Yoon, Sooyong; Kang, Inbyeong
- Issue Date
- May-2017
- Publisher
- Blackwell Publishing Ltd
- Keywords
- A-IGZO; Coplanar; ERDA; Interface trap density (Dit); Oxide TFT; PBTS; Phto C-V method; RBS; Top-gate; XRR
- Citation
- Digest of Technical Papers - SID International Symposium, v.48, no.1, pp.294 - 296
- Indexed
- SCOPUS
- Volume
- 48
- Number
- 1
- Start Page
- 294
- End Page
- 296
- ISSN
- 0097-966X
- Abstract
- We confirm that, the PBTS instability, of coplanar, InGaZnO TFTs can be improved, through the minimization of Non-Bridging Oxygen Vole Centers (NBOHC) and, optimization of hydrogen passivation in the GI/ACT interface region. The quantitative analysis of hydrogen and, oxygen in each region are obtained from physical property measurements. Trap density in GI/ACT interface layer is obtained by photonic capacitance-voltage measurements which are correlated, with PBTS characteristics. A decrease of under, coordinated bonding states lessens electron trap density, which brings improvement, in PBTS from Vth = 2.61V to 0.21V by process optimization. © (2017) by SID-the Society for Information Display. All rights reserved.
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