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A Ku-band High Gain 40 W GaN HPA MMIC for Satellite Systems in a 0.25- μm GaN Technology

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dc.contributor.authorSim, Taejoo-
dc.contributor.authorLee, Seungju-
dc.contributor.authorLee, Dongmin-
dc.contributor.authorChoe, Wonseok-
dc.contributor.authorKim, Minchul-
dc.contributor.authorKim, Sangmo-
dc.contributor.authorLee, Youngwan-
dc.contributor.authorNa, Kyoungil-
dc.contributor.authorKim, Junghyun-
dc.date.accessioned2024-04-03T08:31:06Z-
dc.date.available2024-04-03T08:31:06Z-
dc.date.issued2024-01-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/118417-
dc.description.abstractThis study focuses on the design and validation of an internally matched high-power amplifier monolithic microwave integrated circuit (MMIC) for Ku-band solid-state power amplifier (SSPA) system integration. The designed MMIC exhibits sufficient power gain and output power characteristics, making it suitable for SSPA applications. The MMIC offers a compact and cost-effective SSPA configuration by reducing the number of components, such as gain blocks, isolators, and power combiners. The results show a performance of more than 40 W output power with a considerably high saturated power gain (greater than 22 dB) over the entire band (15.25-16.25 GHz). © 2024 IEEE.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleA Ku-band High Gain 40 W GaN HPA MMIC for Satellite Systems in a 0.25- μm GaN Technology-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/PAWR59907.2024.10438532-
dc.identifier.scopusid2-s2.0-85187228573-
dc.identifier.bibliographicCitation2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), pp 31 - 34-
dc.citation.title2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)-
dc.citation.startPage31-
dc.citation.endPage34-
dc.type.docTypeConference paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthorgallium nitride (GaN)-
dc.subject.keywordAuthormmWave-
dc.subject.keywordAuthorpower amplifiers (PAs)-
dc.subject.keywordAuthorsatellite communications (SATCOM)-
dc.subject.keywordAuthorSSPA-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/10438532-
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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