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A Ku-band High Gain 40 W GaN HPA MMIC for Satellite Systems in a 0.25- μm GaN Technology
- Authors
- Sim, Taejoo; Lee, Seungju; Lee, Dongmin; Choe, Wonseok; Kim, Minchul; Kim, Sangmo; Lee, Youngwan; Na, Kyoungil; Kim, Junghyun
- Issue Date
- Jan-2024
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- gallium nitride (GaN); mmWave; power amplifiers (PAs); satellite communications (SATCOM); SSPA
- Citation
- 2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), pp 31 - 34
- Pages
- 4
- Indexed
- SCOPUS
- Journal Title
- 2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)
- Start Page
- 31
- End Page
- 34
- ISSN
- 0000-0000
- Abstract
- This study focuses on the design and validation of an internally matched high-power amplifier monolithic microwave integrated circuit (MMIC) for Ku-band solid-state power amplifier (SSPA) system integration. The designed MMIC exhibits sufficient power gain and output power characteristics, making it suitable for SSPA applications. The MMIC offers a compact and cost-effective SSPA configuration by reducing the number of components, such as gain blocks, isolators, and power combiners. The results show a performance of more than 40 W output power with a considerably high saturated power gain (greater than 22 dB) over the entire band (15.25-16.25 GHz). © 2024 IEEE.
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Related Researcher
- KIM, JUNG HYUN
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)