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A Concurrent 2.45/5.8 GHz Power Amplifier with an Optimal Dual-band Matching Method

Authors
Lee, SunwooYoon, ByeongcheolJeon, JooyoungKim, Junghyun
Issue Date
Jan-2024
Publisher
IEEE
Keywords
Dual-band; GaN HEMT; matching network; parallel; resonance; power amplifier; series resonance.
Citation
2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), pp 1 - 4
Pages
4
Indexed
SCIE
SCOPUS
Journal Title
2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)
Start Page
1
End Page
4
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/118420
DOI
10.1109/PAWR59907.2024.10438512
ISSN
2164-8751
Abstract
This study presents the design and fabrication of a concurrent 2.45/5.8 GHz dual-band power amplifier (PA) with a dual-band matching method for optimized performance. The proposed matching method simultaneously utilizes series and parallel resonance to transform the frequency-dependent fundamental complex optimum load impedance to 50 O at two arbitrary frequencies. Additionally, the selectable range of a lowfrequency is analyzed when a high-frequency is selected. The dualband PA was designed and fabricated on the Rogers 5880 substrate, utilizing the Wolfspeed GaN HEMT CGH40006s. Measurement results indicate that the implemented dual-band PA achieves a small signal gain of 13.9 dB at 2.45 GHz and 10.6 dB at 5.8 GHz. Furthermore, at the 3 dB compression point, the output power (OP3dB) is measured at 38.4 dBm for 2.45 GHz and 38.6 dBm for 5.8 GHz, while the corresponding drain efficiency (DE3dB) is 71 % at 2.45 GHz and 59.6 % at 5.8 GHz. OP3dB and DE3dBfrequency responses of the dual-band PA were above 38 dBm and 70 % between 2.4 GHz and 2.5 GHz, and over 38 dBm and 55 % from 5.7 GHz to 5.9 GHz, respectively.
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KIM, JUNG HYUN
ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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