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Electrodeposition of Ru on Nanoscale Trench Patterns

Authors
Kim, YoujungLee, JinhyunSeo, JungyoonHan, HaneulHwang, InseongYoon, SanghwaYoo, Bong Young
Issue Date
May-2024
Publisher
Electrochemical Society, Inc.
Keywords
Ru electrodeposition; advanced semiconductor; suppression; interaction between additives; nano-trench filling
Citation
ECS Journal of Solid State Science and Technology, v.13, no.5, pp 1 - 8
Pages
8
Indexed
SCIE
SCOPUS
Journal Title
ECS Journal of Solid State Science and Technology
Volume
13
Number
5
Start Page
1
End Page
8
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/119247
DOI
10.1149/2162-8777/ad4677
ISSN
2162-8769
2162-8777
Abstract
Ru deposition in advanced technology nodes can improve performance by providing low resistance in nanoscale features. In this study, we reported the electrochemical reactions of Ru3+ on an Ru surface using multi-cyclic voltammetry (CV) and behavior of additives during Ru electrodeposition using linear sweep voltammetry (LSV) and potentiostatic measurements. Disodium 3,3'-dithiobis(1-propanesulfonate) (SPS), polyvinylpyrrolidone (PVP), and a bromide ion (Br-) were added for bottom-up filling. We investigated the suppression behavior of PVP. The current density and the onset potential of suppressor breakdown were affected by the suppressor concentration. PVP interacted synergistically with Br- and showed additional suppression. PVP formed a suppressing layer with Br- after formation of a bromide layer. SPS could reduce roughness during electrodeposition of Ru. Based on these results, nano-trenches were filled with Ru using the optimized additive condition.
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ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)
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