Electrodeposition of Ru on Nanoscale Trench Patterns
- Authors
- Kim, Youjung; Lee, Jinhyun; Seo, Jungyoon; Han, Haneul; Hwang, Inseong; Yoon, Sanghwa; Yoo, Bong Young
- Issue Date
- May-2024
- Publisher
- Electrochemical Society, Inc.
- Keywords
- Ru electrodeposition; advanced semiconductor; suppression; interaction between additives; nano-trench filling
- Citation
- ECS Journal of Solid State Science and Technology, v.13, no.5, pp 1 - 8
- Pages
- 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS Journal of Solid State Science and Technology
- Volume
- 13
- Number
- 5
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/119247
- DOI
- 10.1149/2162-8777/ad4677
- ISSN
- 2162-8769
2162-8777
- Abstract
- Ru deposition in advanced technology nodes can improve performance by providing low resistance in nanoscale features. In this study, we reported the electrochemical reactions of Ru3+ on an Ru surface using multi-cyclic voltammetry (CV) and behavior of additives during Ru electrodeposition using linear sweep voltammetry (LSV) and potentiostatic measurements. Disodium 3,3'-dithiobis(1-propanesulfonate) (SPS), polyvinylpyrrolidone (PVP), and a bromide ion (Br-) were added for bottom-up filling. We investigated the suppression behavior of PVP. The current density and the onset potential of suppressor breakdown were affected by the suppressor concentration. PVP interacted synergistically with Br- and showed additional suppression. PVP formed a suppressing layer with Br- after formation of a bromide layer. SPS could reduce roughness during electrodeposition of Ru. Based on these results, nano-trenches were filled with Ru using the optimized additive condition.
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Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles

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