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Universal Method to Determine the Dynamic NBIS- and PBS-induced Instabilities on Self-aligned Coplanar InGaZnO Thin-film Transistors
- Authors
- Jang, Jun Tae; Yu, Hye Ri; Ahn, Geumho; Choi, Sung-Jin; Kim, Dong Myong; Kim, Yong-Sung; Oh, Saeroonter; Baeck, Ju Heyuck; Bae, Jong Uk; Park, Kwon-Shik; Yoon, Soo Young; Kang, In Byeong; Kim, Dae Hwan
- Issue Date
- May-2018
- Publisher
- John Wiley and Sons Inc
- Keywords
- amorphous InGaZnO thin-film transistors; dynamic NBIS- and PBS-induced instabilities; top-gate self-aligned coplanar structure
- Citation
- Digest of Technical Papers - SID International Symposium, v.49, no.1, pp 232 - 235
- Pages
- 4
- Indexed
- SCOPUS
- Journal Title
- Digest of Technical Papers - SID International Symposium
- Volume
- 49
- Number
- 1
- Start Page
- 232
- End Page
- 235
- ISSN
- 0097-966X
2168-0159
- Abstract
- The method for dynamically calculating the NBIS- and PBS- induced ΔVT's is proposed based on experimentally extracted density-of-states and is demonstrated in top-gate self-aligned coplanar amorphous InGaZnO thin-film transistors. The effect of illuminance as well as the bias-dependence is successfully taken into account. Proposed method is potentially useful for the instability-aware design of OLED display backplanes. © 2018 SID.
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