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Enhancing Non-Volatile Memory Performance: Dual Ferroelectric Gate Field-Effect Transistors with Recessed Channel Geometry
- Authors
- 김영현
- Issue Date
- 26-Jun-2024
- Place
- 경주컨벤션센터
- Conference Name
- 한국반도체학술대회
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Related Researcher
- Kim, Young hyun
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)