One-volt oxide based complementary circuitopen access
- Authors
- Wang, Junjie; Lin, Xiaoyu; Li, Yuxiang; Xin, Qian; Song, Aimin; Kim, Jaekyun; Jin, Jidong; Zhang, Jiawei
- Issue Date
- Jul-2024
- Publisher
- American Institute of Physics
- Citation
- AIP Advances, v.14, no.7, pp 1 - 6
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- AIP Advances
- Volume
- 14
- Number
- 7
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/120038
- DOI
- 10.1063/5.0215815
- ISSN
- 2158-3226
2158-3226
- Abstract
- In low-power electronics, there is a substantial demand for high-performance p-type oxide thin-film transistors (TFTs) that are capable of efficient operation at low voltages. In this study, we employ anodization to form an aluminum oxide gate dielectric layer, enabling the fabrication of p-type tin oxide (SnO) TFTs that effectively operate at a low voltage of 1 V. Under optimal device fabrication conditions, the SnO TFT demonstrates an on/off current ratio exceeding 103 and a saturation mobility of 1.94 cm2 V−1 s−1 at 1 V operation. The optimal SnO TFT fabrication conditions are subsequently used to fabricate a complementary inverter, comprising a SnO TFT and an n-type indium gallium zinc oxide TFT, achieving a gain of up to 38 at a 1 V supply voltage. Notably, the inverter’s switching point voltage is finely tuned to the ideal value, precisely half of the supply voltage. This oxide-based complementary inverter showcases promising potential in low-power electronics. © 2024 Author(s).
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