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Pulse program for improving learning accuracy and reducing programming energy consumption of ferroelectric synaptic transistor

Authors
Lee, Jae YeobKim, Cheol JunKu, MinkyungKim, Tae HoonNoh, TaeheeLee, Seung WonShin, YoonchulAhn, Ji-HoonKang, Bo Soo
Issue Date
Nov-2024
Publisher
The Korean Physical Society
Keywords
Ferroelectric; Hafnium zirconium oxide (HZO); Thin-Film transistor (TFT); Synaptic device; Neuromorphic
Citation
Current Applied Physics, v.67, pp 93 - 100
Pages
8
Indexed
SCIE
SCOPUS
KCI
Journal Title
Current Applied Physics
Volume
67
Start Page
93
End Page
100
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/120296
DOI
10.1016/j.cap.2024.07.018
ISSN
1567-1739
1878-1675
Abstract
Neuromorphic computing is a next‐generation computing technology featured by parallel data processing and adaptive learning. Two significant factors that improve learning accuracy are the ‘dynamic range’ and ‘linearity’ of the weight update. In a ferroelectric synaptic transistor, the weight update can be modulated by adjusting the applied voltage. The voltage pulse train should be carefully optimized to improve the learning accuracy and reduce programming energy consumption. In this study, we investigated the learning accuracy of neuromorphic computing based on the characteristics of synaptic devices and the program energy consumption according to pulse programs. We demonstrated changes in the analog conductance characteristics of ferroelectric thin‐film transistors by varying the pulse program for synaptic plasticity, discussed the characteristics for improving learning accuracy, and compared the programming energy consumption according to the pulse programs. We proposed a logarithmic‐incremental‐step pulse program that reduces programming energy consumption and improves learning accuracy. © 2024
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ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)
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