Area-selective deposition of lateral van der Waals semiconductor heterostructures

Abstract

Scalable area-selective deposition of van der Waals semiconductor monolayer enables the tunable design of atomically thin, twodimensional electronic and photonic material platforms. Here, we report lateral patterning of tunable heterostructures composed of MoS2 and WS2 films using sequential chemical vapor deposition. These MoS2-WS2 lateral heterostructures are synthesized using a kinetics-controlled process that exploits differences in surface energies and supersaturation, allowing for precise monolayer-bymonolayer stitching. This approach ensures accurate stitching of monolayers without atomic intermixing within the layer. We achieve scalable planar integration of dissimilar monolayer films at millimeter scale, featuring alternating channels ranging from a few hundred nanometers to tens of micrometers in width. Moreover, these on-monolayer integrations directly synthesize tunable 2D resistor networks and planar photodetectors for next-generation atomically thin electronic circuits.