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A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density
- Authors
- Cho, Wanik; Jung, Jongseok; Kim, Jongwoo; Ham, Junghoon; Lee, Sangkyu; Noh, Yujong; Kim, Dauni; Lee, Wanseob; Cho, Kayoung; Kim, Kwanho; Lee, Heejoo; Chai, Sooyeol; Jo, Eunwoo; Cho, Hanna; Kim, Jong Seok; Kwon, Chankeun; Park, Cheolioona; Nam, Hveonsu; Won, Haeun; Kim, Taeho; Park, Kyeonghwan; Oh, Sanghoon; Ban, Jinhyun; Park, Junyoung; Shin, Jaehyeon; Shin, Taisik; Jang, Junseo; Mun, Jiseong; Choi, Jehyun; Choi, Hyunseung; Choi, Suna-Wook; Park, Wonsun; Yoon, Dongkvu; Kim, Minsu; Lim, Junvoun; An, Chiwook; Shirr, Hyunyoung; Oh, Haesoon; Park, Haechan; Shim, Sungbo; Huh, Hwang; Choi, Honasok; Lee, Seungpil; Sim, Jaesuna; Gwon, Kichana; Kim, Jumsoo; Jeong, Woopyo; Choi, Jungdal; Jin, Kyo-Won
- Issue Date
- 20-Feb-2022
- Conference Name
- 2022 IEEE International Solid- State Circuits Conference (ISSCC)
- Place
- 미국
San Francisco, CA, USA
- Conference Date
- 2022-02-20 ~ 2022-02-26
- Conference Name
- 2022 IEEE International Solid- State Circuits Conference (ISSCC)
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- There are no files associated with this item.
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Related Researcher
- Kim, Jong Seok
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)